Statistical device simulations of III-V nanowire resonant tunneling diodes as physical unclonable functions source
FI: 1,916
Tipo: Article
Colaboración
Año: 2022
Autores
Rezaei, A; Maciazek, P; Sengupta, A; Dutta, T; Medina-Bailon, C; Asenov, A; Georgiev, VP
Revista
Título: SOLID-STATE ELECTRONICS
Cuartil
- Q3