Impact of Device Geometry of the Fin Electron-Hole Bilayer Tunnel FET
Tipo: Proceedings Paper
Colaboración
Año: 2016
Autores
Aiper, C; Padilla, JL; Paiestri, P; Ionescu, AM
Revista
Título: 2016 46TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC)
