Comment on “Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening”
FI: 2,207
Tipo: Editorial Material
Artículo original
Año: 2016
Autores
Padilla, JL; Palomares, A; Gamiz, F
Revista
Título: IEEE TRANSACTIONS ON ELECTRON DEVICES
Cuartil
- Q1