Assessment of Confinement-Induced Band-to-Band Tunneling Leakage in the FinEHBTFET

Tipo: Proceedings Paper

Inicio · TEC04-Nanoelectrónica

Artículo original

Año: 2016

Autores

Padilla, JL; Alper, C; Gamiz, F; Ionescu, AM

Revista

Título: 2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2016)