Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities

Artículo original

Año: 2018

Padilla, JL; Medina-Bailon, C; Navarro, C; Alper, C; Gamiz, F; Ionescu, AM

Título: IEEE TRANSACTIONS ON ELECTRON DEVICES

• Q2