A review of the Z(2)-FET 1T-DRAM memory: Operation mechanisms and key parameters

Colaboración

Año: 2018

Cristoloveanu, S; Lee, KH; Parihar, MS; El Dirani, H; Lacord, J; Martinie, S; Le Royer, C; Barbe, JC; Mescot, X; Fonteneau, P; Galy, P; Gamiz, F; Navarro, C; Cheng, B; Duan, M; Adamu-Lema, F; Asenov, A; Taur, Y; Xu, Y; Kim, YT; Wan, J; Bawedin, M

Título: SOLID-STATE ELECTRONICS

• Q3