Description of Gate-to-Channel Tunneling Leakage Mechanism in a 2D Monte Carlo Simulator

Artículo original

Año: 2023

Medina-Bailon, C; Rodriguez, G; Padilla, JL; Donetti, L; Navarro, C; Sampedro, C; Gamiz, F

Título: 2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPAD